? semiconductor components industries, llc, 2010 september, 2016 ? rev. 9 publication order number: umz1nt1/d umz1nt1g complementary dual general purpose amplifier transistor pnp and npn surface mount features ? high voltage and high current: v ceo = 50 v, i c = 200 ma ? high h fe : h fe = 200 400 ? moisture sensitivity level: 1 ? esd rating ? human body model: 3a esd rating ? machine model: c ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol value unit collector?base voltage v (br)cbo 60 vdc collector?emitter voltage v (br)ceo 50 vdc emitter?base voltage v (br)ebo 7.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance, junction-to-ambient r ja 670 (note 1) 490 (note 2) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1) 385 (note 2) 2.0 (note 1) 3.0 (note 2) mw mw/ c thermal resistance, junction-to-ambient r ja 493 (note 1) 325 (note 2) c/w thermal resistance, junction-to-lead r jl 188 (note 1) 208 (note 2) c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad sc?88 case 419b marking diagram 1 3z = device code m = date code = pb?free package device package shipping ? ordering information q 1 (4) (5) (6) (1) (2) (3) q 2 3z m 1 umz1nt1g sc?88 (pb?free) 3000 / tape & reel (note: microdot may be in either location) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. www. onsemi.com NSVUMZ1NT1G sc?88 (pb?free) 3000 / tape & reel
umz1nt1g www. onsemi.com 2 q1: npn electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit collector?emitter breakdown voltage (i c = 2.0 madc, i b = 0) v (br)ceo 50 ? ? vdc collector?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? ? vdc emitter?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 7.0 ? ? vdc collector?base cutoff current (v cb = 45 vdc, i e = 0) i cbo ? ? 0.1 adc collector?emitter cutoff current (v ce = 10 vdc, i b = 0) (v ce = 30 vdc, i b = 0) (v ce = 30 vdc, i b = 0, t a = 80 c) i ceo ? ? ? ? ? ? 0.1 2.0 1.0 adc adc madc dc current gain (note 3) (v ce = 6.0 vdc, i c = 2.0 madc) h fe 200 ? 400 ? collector?emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? ? 0.25 vdc transistor frequency f t ? 114 ? mhz 3. pulse test: pulse width 300 s, d.c. 2%. q2: pnp electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit collector?emitter breakdown voltage (i c = 2.0 madc, i b = 0) v (br)ceo ?50 ? ? vdc collector?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo ?60 ? ? vdc emitter?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo ?7.0 ? ? vdc collector?base cutoff current (v cb = 45 vdc, i e = 0) i cbo ? ? ?0.1 adc collector?emitter cutoff current (v ce = 10 vdc, i b = 0) (v ce = 30 vdc, i b = 0) (v ce = 30 vdc, i b = 0, t a = 80 c) i ceo ? ? ? ? ? ? ?0.1 ?2.0 ?1.0 adc adc madc dc current gain (note 3) (v ce = 6.0 vdc, i c = 2.0 madc) h fe 200 ? 400 ? collector?emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? ? ?0.3 vdc transistor frequency f t ? 142 ? mhz
umz1nt1g www. onsemi.com 3 typical electrical characteristics: pnp transistor figure 1. collector saturation region 0?1?2?3?4 ?6 ?5 ?200 0 ?40 i c , collector current (ma) v ce , collector?emitter voltage (v) ?80 ?120 ?160 figure 2. dc current gain ?1 ?10 ?100 ?100 0 1000 10 h fe , dc current gain i c , collector current (ma) 100 t a = 25 c ?2.0 ma ?1.5 ma ?1.0 ma ?0.5 ma i b = ?0.2 ma v ce = ?1.0 v t a = 100 c ?25 c 25 c figure 3. dc current gain ?1 ?10 ?1000 ?100 1000 10 h fe , dc current gain i c , collector current (ma) 100 figure 4. v ce(sat) versus i c ?1 ?10 ?100 ?100 0 ?1 ?0.01 v ce(sat) , maximum collector voltage (v) i c , collector current (ma) ?0.1 i c /i b = 10 t a = 100 c ?25 c 25 c t a = 100 c ?25 c 25 c figure 5. v be(sat) versus i c ?1 ?10 ?1000 ?100 ?10 ?0.1 base?emitter saturation voltage (v) i c , collector current (ma) ?1 figure 6. base?emitter voltage 0 ?0.1 ?10,000 i b , base current ( a) v be , base?emitter voltage (v) ?0.1 common emitter v ce = 6 v t a = 100 c ?25 c 25 c t a = 25 c i c /i b = 10 ?1 ?10 ?100 ?1000 ?0.2 ?0.3 ?0.4 ?0.5 ?0.6 ?0.7 ?0.8 ?0.9 ?1 v ce = ?6.0 v
umz1nt1g www. onsemi.com 4 typical electrical characteristics: npn transistor figure 7. collector saturation voltage 01 2 3 4 6 5 280 0 40 i c , collector current (ma) v ce , collector?emitter voltage (v) 80 120 160 figure 8. dc current gain 1 10 100 1000 1000 10 h fe , dc current gain i c , collector current (ma) 100 t a = 25 c 6.0 ma 1.0 ma i b = 0.2 ma v ce = 1.0 v t a = 100 c ?25 c 25 c figure 9. dc current gain 1 10 1000 100 1000 10 h fe , dc current gain i c , collector current (ma) 100 figure 10. v ce(sat) versus i c 1 10 100 1000 1 0.01 v ce(sat) , maximum collector voltage (v) i c , collector current (ma) 0.1 i c /i b = 10 t a = 100 c ?25 c 25 c t a = 100 c ?25 c 25 c figure 11. v be(sat) versus i c 1 10 1000 100 10 0.1 base?emitter saturation voltage (v) i c , collector current (ma) 1 figure 12. base?emitter voltage 0 0.1 10,000 i b , base current ( a) v be , base?emitter voltage (v) 0.1 common emitter v ce = 6 v t a = 100 c ?25 c 25 c t a = 25 c i c /i b = 10 1 10 100 1000 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 5.0 ma 3.0 ma 200 240 2.0 ma 0.5 ma v ce = 6.0 v
umz1nt1g www. onsemi.com 5 package dimensions sc?88/sc70?6/sot?363 case 419b?02 issue y notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 umz1nt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ?
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